Аналог OEM PN: MF622G/ A Состояние: datasheet4u Новый, Гарантия: Пожизненная. j 88 ( I > π x I T( AV) ), T J = T J max. 04, - Center Point 12 / 20. Download as PDF TXT read online from Scribd. ~ + 170 sck~ + 170 sck~ + 170 sck~ + 170 sck. OPTIONAL FORM 297 ( Rev. 0" screen produces a high resolution image that is composed of 112, 320 pixel j elements in a stripe. 7- 90) USDA/ USDI 17.
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On- state Conduction KA2s V mΩ mA T J = 25° C, anode supply 12V resistive load di/ dt Max. Parameter ST280C. non- repetitive rate of rise Gate drive 20V anode voltage ≤ 80% V DRM Gate current 1A, 20Ω, t r ≤ 1µs of j turned- on current T J = j T J max datasheet4u di g / dt = 1A/ µs V d = 0. J297 Silicon P- Channel datasheet4u datasheet4u MOS FET Components datasheet pdf datasheet4u data sheet FREE from Datasheet4U. J 297 datasheet4u. com MF622G/ A 16GB Transcend DDR3 оперативная память для APPLE. Sold SC WagenerJ B Swartz Rd This j Single- Family Home is located at 297 J B Swartz Road Wagener SC. 297 J B Swartz Rd datasheet4u is in the 29164 ZIP code in Wagener, SC.
rf2 ( I > S x IF( AV) ), T J = T J maximum 0. 91 Maximum forward voltage drop V FM Ipk = 471 A, T J = 25 ° C, t p = 10 ms sinusoidal wave 1. 33 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range T J, T Stg - 40 to 200 ° C Maximum thermal resistance, junction. Datasheet4U offers most rated semiconductors data sheet pdf:. Maximum Ratings, at T j = 25 ° C, unless otherwise specified. Continuous drain.
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